ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,429, issued on Dec. 2, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor memory device" was invented by Kouji Matsuo (Ama Aichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes: a first semiconductor extending in a first direction parallel to a substrate; a first conductor extending in a second direction perpendicular to the first direction; a first charge storage layer surrounding the first conductor; a first insulator provided between the first conductor and the first charge storage layer; a second insulator provided between the first charge storage layer and the first semi...