ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,474, issued on Dec. 2, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device and semiconductor memory device" was invented by Hiroki Kawai (Aichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes an oxide semiconductor layer, an oxide conductor layer disposed on the oxide semiconductor layer, a first oxide layer disposed on the oxide conductor layer and comprising vanadium oxide, and a metal wiring layer disposed on the first oxide layer."
The patent was filed on March 2, 2023, under Application No. 18/177,751.
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