ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,837, issued on Dec. 16, was assigned to Kioxia Corp. (Tokyo).

"Magnetic memory device" was invented by Eiji Kitagawa (Seoul, South Korea) and Young Min Eeh (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In general, according to one embodiment, a magnetic memory device includes a magnetoresistive effect element. The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the first ferromagnetic layer with respect to the second ferromagnetic layer. The third non-magnetic layer is arranged on a side opp...