US Patent Issued to Kioxia on Dec. 16 for "3D semiconductor memory device including inter-finger structure and interlayer insulating layers configured to absorb compressing stress" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,172, issued on Dec. 16, was assigned to Kioxia Corp. (Tokyo).

"3D semiconductor memory device including inter-finger structure and interlayer insulating layers configured to absorb compressing stress" was invented by So Hikosaka (Yokkaichi, Japan), Akiko Nomachi (Sapporo, Japan) and Osamu Matsuura (Kuwana, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a stacked structure including first layers including conductive layers disposed in a first and a third regions and insulating layers disposed in a second region, first to third insulating members extending in a stacking direction, semiconductor layers disp...