US Patent Issued to KIOXIA on Aug. 5 for "Semiconductor device with conductors disposed in insulating films and method for manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,142, issued on Aug. 5, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device with conductors disposed in insulating films and method for manufacturing the same" was invented by Atsushi Kato (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first insulating film; an interconnect disposed in the first insulating film and containing copper, cobalt, nickel, or manganese; a second insulating film that includes a first portion connected to the interconnect and that contains silicon and nitrogen; a third insulating film including a second portion connected to the first portion; a first conductor di...