ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,144, issued on Aug. 5, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Akifumi Gawase (Kuwana Mie, Japan) and Yimin Liu (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first conductive layers, a width in a first direction thereof being a first width, a second conductive layer arranged with first conductive layers, a smaller one of a width in the first direction thereof and a width in a second direction thereof being a second width that is larger than the first width, a third conductive layer in contact with one end portion of at leas...