US Patent Issued to KIOXIA on Aug. 5 for "Semiconductor device and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,698, issued on Aug. 5, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and method for manufacturing the same" was invented by Masayoshi Tagami (Kuwana Mie, Japan), Katsuyuki Kitamoto (Yokkaichi Mie, Japan) and Ken Komiya (Nagoya Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a plurality of first electrode films stacked in a state of being insulated from each other; a plurality of semiconductor members extending in a stacked direction of the plurality of first electrode films in a stacked body of the plurality of first electrode films; a plurality of charge storage members provided between the ...