US Patent Issued to Kioxia on Aug. 5 for "Chip bonded semiconductor memory device with different charge storage films" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,147, issued on Aug. 5, was assigned to Kioxia Corp. (Tokyo).

"Chip bonded semiconductor memory device with different charge storage films" was invented by Keisuke Nakatsuka (Kobe Hyogo, Japan) and Yasuhiro Uchiyama (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, there is provided a semiconductor memory device including a first chip, a second chip and a third chip. In the first chip, plural first conductive layers are stacked via a first insulating layer. In the second chip, plural second conductive layers are stacked via a second insulating layer. A number of stack layers in the plural first conductiv...