US Patent Issued to Kioxia on Aug. 12 for "Semiconductor manufacturing apparatus, method of manufacturing semiconductor device and method of film formation" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,385,135, issued on Aug. 12, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor manufacturing apparatus, method of manufacturing semiconductor device and method of film formation" was invented by Fumiki Aiso (Kuwana, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor manufacturing apparatus according to the present embodiment includes a chamber on which a substrate is placed, a first gas flow path configured to supply a first processing gas into the chamber, a second gas flow path configured to supply a second processing gas into the chamber, a first replacement gas flow path configured to supply a first replacement gas into the chamb...