US Patent Issued to KIOXIA on Aug. 12 for "Nonvolatile semiconductor memory device including a memory cell" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,637, issued on Aug. 12, was assigned to KIOXIA Corp. (Tokyo).

"Nonvolatile semiconductor memory device including a memory cell" was invented by Megumi Ishiduki (Yokkaichi Mie, Japan), Hiroshi Nakaki (Yokkaichi Mie, Japan) and Takamasa Ito (Nagoya Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a base body, a stacked body on the base body and a first columnar part. The base body includes a substrate, a first insulating film on the substrate, a first conductive film on the first insulating film, and a first semiconductor part on the first conductive film. The stacked body includes conductive layers and insul...