ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,388,031, issued on Aug. 12, was assigned to Kioxia Corp. (Tokyo).

"Memory device" was invented by Ayako Kawanishi (Yokkaichi, Japan) and Shinya Arai (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first chip includes a substrate, and first and second electrodes in a second region surrounding a first region. A second chip includes an interconnect layer, third and fourth electrodes in the second region, and first and second walls. Each of the first and third electrodes and the first wall includes a conductor surrounding the first region. The first and second electrodes are respectively in contact with the third and fourth electrodes. Th...