ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,065, issued on April 8, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Toshifumi Minami (Yokohama Kanagawa, Japan), Atsuhiro Sato (Meguro Tokyo, Japan), Keisuke Yonehama (Kamakura Kanagawa, Japan), Yasuyuki Baba (Zama Kanagawa, Japan), Hiroshi Shinohara (Yokosuka Kanawaga, Japan), Hideyuki Kamata (Kawasaki Kanagawa, Japan) and Teppei Higashitsuji (Fujisawa Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a...