ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,405, issued on April 8, was assigned to Kioxia Corp. (Tokyo).
"Non-volatile semiconductor memory device and memory system" was invented by Yasushi Nagadomi (Yokohama Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile semiconductor memory device includes a memory cell array and a control circuit. A control circuit performs an erase operation providing a memory cell with a first threshold voltage level for erasing data of a memory cell, and then perform a plurality of first write operations providing a memory cell with a second threshold voltage level, the second threshold voltage level being higher than the first threshold ...