US Patent Issued to Kioxia Coporation on Nov. 18 for "Semiconductor device and semiconductor memory device each having portions of oxide semiconductor between gate insulating layer and electrodes" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,718, issued on Nov. 18, was assigned to Kioxia Coporation (Tokyo).

"Semiconductor device and semiconductor memory device each having portions of oxide semiconductor between gate insulating layer and electrodes" was invented by Akifumi Gawase (Kuwana Mie, Japan), Ha Hoang (Kuwana Mie, Japan), Atsuko Sakata (Yokkaichi Mie, Japan), Yuta Kamiya (Nagoya Aichi, Japan), Kazuhiro Matsuo (Kuwana Mie, Japan), Keiichi Sawa (Yokkaichi Mie, Japan), Kota Takahashi (Yokkaichi Mie, Japan), Kenichiro Toratani (Yokkaichi Mie, Japan) and Yimin Liu (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of embodiments includes: a fir...