ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,811, issued on April 22, was assigned to Kioxia Corp. (Tokyo) and SK HYNIX INC. (Gyeonggi-Do, South Korea).
"Magnetic memory device" was invented by Tadaaki Oikawa (Seoul, South Korea), Youngmin Eeh (Seongnam-si, South Korea), Eiji Kitagawa (Seoul, South Korea), Taiga Isoda (Seoul, South Korea), Ku Youl Jung (Icheon-si, South Korea) and Jin Won Jung (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a second magnetic layer having a variable magnetization direction, a non-magnet...