ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,050, issued on March 25, was assigned to KIOXIA Corp. (Tokyo) and KANTO DENKA KOGYO Co. LTD. (Tokyo).
"Method of manufacturing semiconductor device, and etching gas" was invented by Takaya Ishino (Yokkaichi, Japan), Toshiyuki Sasaki (Yokkaichi, Japan), Mitsuharu Shimoda (Shibukawa, Japan) and Hisashi Shimizu (Shibukawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, "x" denotes an integer of three or more, ...