ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,460,289, issued on Nov. 4, was assigned to KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS (Dhahran, Saudi Arabia).
"Mixed gas method for making mixed chromium nitride film" was invented by Khan Alam (Dhahran, Saudi Arabia), Muhammad Baseer Haider (Dhahran, Saudi Arabia), Khalil A. Ziq (Dhahran, Saudi Arabia) and Bakhtiar Ul Haq (Dhahran, Saudi Arabia).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a chromium nitride (CrN) thin film is provided. The method includes reactive radio frequency magnetron sputtering chromium onto a substrate in the presence of a gaseous mixture including nitrogen and argon to form the CrN thin film, where ...