ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,196, issued on Nov. 25, was assigned to KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS (Dhahran, Saudi Arabia).
"Method for forming a bismuth/tungsten oxide heterostructure film" was invented by Amar Kamal Mohmeadkhair Salih (Dhahran, Saudi Arabia), Qasem Ahmed Qasem Drmosh (Dhahran, Saudi Arabia), Tarek Kandiel (Dhahran, Saudi Arabia) and Zain Hassan Yamani (Dhahran, Saudi Arabia).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for coating a substrate with a Co-Pi modified BiVO4/WO3 heterostructure film includes direct current reactive sputtering tungsten (W) onto a substrate in a gaseous mixture containing oxygen to form a tungsten trioxide...