US Patent Issued to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY on Sept. 23 for "Dislocation free semiconductor nanostructures grown by pulse laser deposition with no seeding or catalyst" (Saudi Arabia Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,406, issued on Sept. 23, was assigned to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Thuwal, Saudi Arabia).

"Dislocation free semiconductor nanostructures grown by pulse laser deposition with no seeding or catalyst" was invented by Iman Salem Roqan (Thuwal, Saudi Arabia) and Dhaifallah Rahim Almalawi (Thuwal, Saudi Arabia).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is a method for forming a semiconductor nanostructure on a substrate. The method includes placing a substrate and a semiconductor material in a pulsed laser deposition chamber; selecting parameters including a fluence of a laser beam, a pressure P inside the chamber, a t...