ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,489, issued on July 22, was assigned to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Thuwal, Saudi Arabia).

"Concurrent cationic and anionic metal halide perovskite defect passivation method and device" was invented by Furkan Halis Isikgor (Thuwal, Saudi Arabia) and Stefaan De Wolf (Thuwal, Saudi Arabia).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first electrode located on the substrate, a metal halide perovskite layer located on the first electrode, a second electrode located on the metal halide perovskite layer, and passivation molecules that passivate the metal halide perovskite layer. The ...