ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,543, issued on March 25, was assigned to Kepler Computing Inc. (San Francisco).

"High density ferroelectric random access memory (FeRAM) devices and methods of fabrication" was invented by Debraj Guhabiswas (Berkeley, Calif.), Maria Isabel Perez (Berkeley, Calif.), Jason Y. Wu (Albany, Calif.), James David Clarkson (El Sobrante, Calif.), Gabriel Antonio Paulius Velarde (San Leandro, Calif.), Niloy Mukherjee (San Ramon, Calif.), Noriyuki Sato (Palo Alto, Calif.), Amrita Mathuriya (Portland, Ore.), Saskikanth Manipatruni (Portland, Ore.) and Ramamoorthy Ramesh (Moraga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Non lead-based perovskite fe...