ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,127, issued on June 17, was assigned to Kepler Computing Inc. (San Francisco).

"Non-linear polar material based multi-capacitor high density bit-cell" was invented by Rajeev Kumar Dokania (Beaverton, Ore.), Mustansir Yunus Mukadam (Seattle), Erik Unterborn (Cary, N.C.), Pramod Kolar (Cary, N.C.), Amrita Mathuriya (Portland, Ore.), Debo Olaosebikan (San Francisco), Tanay Gosavi (Portland, Ore.), Noriyuki Sato (Hillsboro, Ore.) and Sasikanth Manipatruni (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein is a memory bit-cell that results in lower leakage and higher sensing margin. In at least one embodiment, a memory bit-ce...