ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,656, issued on Dec. 16, was assigned to Kepler Computing Inc. (San Francisco).
"Doped polar layers and semiconductor device incorporating same" was invented by Ramesh Ramamoorthy (Moraga, Calif.), Sasikanth Manipatruni (Portland, Ore.) and Gaurav Thareja (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a do...