US Patent Issued to JX Advanced Metals on March 4 for "Sputtering target and manufacturing method therefor" (Japanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,241,153, issued on March 4, was assigned to JX Advanced Metals Corp. (Tokyo).

"Sputtering target and manufacturing method therefor" was invented by Tomio Otsuki (Ibaraki, Japan) and Yasushi Morii (Ibaraki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less."

The patent was filed o...