US Patent Issued to JX ADVANCED METALS, IBARAKI UNIVERSITY on Oct. 21 for "Mg 2 Si single crystal, Mg 2 Si single crystal substrate, infrared light receiving element and method for producing Mg 2 Si single crystal" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,448,704, issued on Oct. 21, was assigned to JX ADVANCED METALS Corp. (Tokyo) and IBARAKI UNIVERSITY (Mito, Japan).

"Mg 2 Si single crystal, Mg 2 Si single crystal substrate, infrared light receiving element and method for producing Mg 2 Si single crystal" was invented by Haruhiko Udono (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a Mg2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of plus-minus0.020deg."

The patent was filed on Feb. 25, 2021, under Application...