US Patent Issued to JSR on July 8 for "Silicon-containing composition and method of producing semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,353,133, issued on July 8, was assigned to JSR Corp. (Tokyo).

"Silicon-containing composition and method of producing semiconductor substrate" was invented by Ryuichi Serizawa (Tokyo) and Kengo Hirasawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising ...