US Patent Issued to JSAB TECHNOLOGIES (SHENZHEN) on Sept. 2 for "Power semiconductor device and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,398, issued on Sept. 2, was assigned to JSAB TECHNOLOGIES (SHENZHEN) LTD. (Guangdong, China).

"Power semiconductor device and preparation method thereof" was invented by Yong Liu (Shenzhen, China), Hao Feng (Shenzhen, China) and Johnny Kin On Sin (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a power semiconductor device and a preparation method thereof, which belongs to the field of power semiconductor devices. By introducing a punch-through triode structure for electron extraction in a drift region, the frontside hole injection efficiency is reduced, and hole currents from emitters are converted into electron drift c...