US Patent Issued to JSAB TECHNOLOGIES (SHENZHEN) on July 15 for "Electron extraction type free-wheeling diode device and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,930, issued on July 15, was assigned to JSAB TECHNOLOGIES (SHENZHEN) LTD. (Shenzhen, China).

"Electron extraction type free-wheeling diode device and preparation method thereof" was invented by Hao Feng (Shenzhen, China), Yong Liu (Shenzhen, China) and Johnny Kin On Sin (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electron extraction type free-wheeling diode device and a preparation method thereof are provided by the present disclosure, and more than one first structures for increasing the density of electron extraction pathways are provided on a N-type drift region. Each of the first structures includes a lightly doped P-type ...