ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,428,311, issued on Sept. 30, was assigned to JINGMEN GEM Co. LTD (Hubei, China).
"Preparation method for high nickel ternary precursor capable of preferential growth of crystal planes by adjusting and controlling addition amount of seed crystals" was invented by Kaihua Xu (Hubei, China), Zhenkang Jiang (Hubei, China), Zhou Tang (Hubei, China), Tao Li (Hubei, China), Xiuping Du (Hubei, China), Liang Bai (Hubei, China), Hua Zhang (Hubei, China), Zhijiang Wu (Hubei, China) and Shifeng Jiang (Hubei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method for a high nickel ternary precursor capable of preferential growth of crystal planes ...