US Patent Issued to Jiangsu Silicon Integrity Semiconductor Technology on Dec. 23 for "Method for chip packaging with high-density connection layer, and chip packaging structure" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,098, issued on Dec. 23, was assigned to Jiangsu Silicon Integrity Semiconductor Technology Co. Ltd. (Pukou Nanjing, China).

"Method for chip packaging with high-density connection layer, and chip packaging structure" was invented by Steven Pan (Nanjing, China), Alex Xie (Nanjing, China), Peter Chen (Nanjing, China), Baker Ma (Nanjing, China) and Melvin Mei (Nanjing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a method for chip packaging having a high-density connection layer and a chip packaging structure, the method comprising S1: preparing a high-density connection layer having multilayered metal wiring layer; S2: preparing ...