US Patent Issued to JIANGSU LEUVEN INSTRUMENTS on Sept. 9 for "Method for etching MRAM magnetic tunnel junction" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,478, issued on Sept. 9, was assigned to JIANGSU LEUVEN INSTRUMENTS Co. LTD (Xuzhou, China).

"Method for etching MRAM magnetic tunnel junction" was invented by Jiahe Li (Xuzhou, China), Yuxin Yang (Xuzhou, China), Taiyan Peng (Xuzhou, China) and Kaidong Xu (Xuzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for etching an MRAM magnetic tunnel junction. The method includes performing a main etching step with an etching amount of t1 by using ion beam etching and/or reactive ion etching, wherein the direction angle of an ion beam is 10deg-60deg, and the bias voltage of the reactive ion etching is 400 V-1000 V; performing a cleaning s...