US Patent Issued to JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH on Sept. 9 for "P-type material, and implementations thereof" (Indian Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,467, issued on Sept. 9, was assigned to JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH (Karnataka Bangalore, India).

"P-type material, and implementations thereof" was invented by Kanishka Biswas (Karnataka Bangalore, India), Subhajit Roychowdhury (Karnataka Bangalore, India) and Tanmoy Ghosh (Karnataka Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a p-type material of Formula I: AgSb1-xCdxTe2, wherein x is in a range of 0.01-0.07. It further discloses a process of preparation of the p-type material, and the use of the p-type material as a thermoelectric material."

The patent was filed o...