ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,654, issued on March 11, was assigned to Japan Display Inc. (Tokyo).
"Semiconductor device" was invented by Yohei Yamaguchi (Tokyo), Yuichiro Hanyu (Tokyo) and Hiroki Hidaka (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the f...