ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,722, issued on July 8, was assigned to Japan Display Inc. (Tokyo).
"Manufacturing method of an oxide semiconductor device" was invented by Yohei Yamaguchi (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an int...