ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,033, issued on July 15, was assigned to JAPAN DISPLAY INC. (Tokyo).
"Semiconductor device and method of manufacturing semiconductor device" was invented by Hajime Watakabe (Tokyo), Akihiro Hanada (Tokyo), Marina Mochizuki (Tokyo), Ryo Onodera (Tokyo), Fumiya Kimura (Tokyo) and Isao Suzumura (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a P+ layer from being generated and a metal wiring installed over the P+ layer from coming down while securing the electrical conductivity of the P+ lay...