ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,696, issued on April 8, was assigned to Japan Display Inc. (Tokyo).
"Oxide semiconductor device" was invented by Hajime Watakabe (Tokyo), Toshihide Jinnai (Tokyo), Ryo Onodera (Tokyo) and Akihiro Hanada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semic...