ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,831, issued on April 22, was assigned to Japan Display Inc. (Tokyo).
"Semiconductor device" was invented by Akihiro Hanada (Tokyo) and Toshihide Jinnai (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a technology using which, in a thin film transistor using oxide semiconductor, the resistance of a channel region of the oxide semiconductor is made high, and at the same time the resistances of a source region and a drain region of the oxide semiconductor are made low. There is provided a semiconductor device including: a thin film transistor including oxide semiconductor, the oxide semiconductor in...