US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on Jan. 13 for "Etching apparatus and etching method using the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,459, issued on Jan. 13, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea).

"Etching apparatus and etching method using the same" was invented by Chin-Wook Chung (Seoul, South Korea) and Jiwon Jung (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an etching method. The etching method includes loading a substrate into a process chamber, wherein the process chamber includes a first chamber part and a second chamber part, and the substrate is loaded into the second chamber part, supplying high-density gas plasma to the first chamber part, supplying ultra-low electr...