ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,747, issued on Nov. 4, was assigned to IPOWER SEMICONDUCTOR (Gilroy, Calif.).
"Shielded trench devices" was invented by Hamza Yilmaz (Gilroy, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A shield trench power device such as a trench MOSFET or IGBT includes a substrate or an epitaxial layer of silicon, silicon carbide, gallium nitride, or gallium arsenide and employs an in-trench structure including a gate structure and an underlying polysilicon or oxide shield region that contacts a shield region in an epitaxial or crystalline layer of the device. The poly silicon region may be laterally confined by spacers in a gate trench and may contact o...