US Patent Issued to IPOWER SEMICONDUCTOR on March 25 for "Field stop IGBT with grown injection region" (California Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,553, issued on March 25, was assigned to IPOWER SEMICONDUCTOR (Gilroy, Calif.).

"Field stop IGBT with grown injection region" was invented by Hamza Yilmaz (Gilroy, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field stop insulated gate bipolar transistor (IGBT) fabricated without back-side laser dopant activation or any process temperatures over 450deg C. after fabrication of front-side IGBT structures provides activated injection regions with controlled dopant concentrations. Injection regions may be formed on or in a substrate by epitaxial growth or ion implants and diffusion before growth of N field stop and drift layers and front-side...