US Patent Issued to Ipcell on Oct. 7 for "Memory device, integrated circuit and manufacturing method of the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,591, issued on Oct. 7, was assigned to Ipcell Corporation Limited (Hong Kong, Hong Kong).

"Memory device, integrated circuit and manufacturing method of the same" was invented by Te-Hsun Hsu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprises a memory cell comprising first to third transistors and a fuse element. A control terminal and a first terminal of the first transistor are coupled to a write word line and a source line respectively. The second transistor has a control terminal coupled to a second terminal of the first transistor and a first terminal coupled to a bit line. A first terminal of the fus...