US Patent Issued to IOTMEMORY TECHNOLOGY on Jan. 13 for "Non-volatile memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,035, issued on Jan. 13, was assigned to IOTMEMORY TECHNOLOGY INC. (Taipei, Taiwan).

"Non-volatile memory device" was invented by Der-Tsyr Fan (Taoyuan, Taiwan), I-Hsin Huang (Taoyuan, Taiwan), Tzung-Wen Cheng (New Taipei, Taiwan) and Yu-Ming Cheng (Yilan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes at least one memory cell, and the memory cell includes a substrate, an assist gate structure, a tunneling dielectric layer, a floating gate, and an upper gate structure. The assist gate structure is disposed on the substrate. The floating gate includes two opposite first top edges arranged along a fir...