US Patent Issued to IOTMEMORY TECHNOLOGY on April 15 for "Method of manufacturing non-volatile memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,422, issued on April 15, was assigned to IOTMEMORY TECHNOLOGY INC. (Taipei, Taiwan).

"Method of manufacturing non-volatile memory device" was invented by Der-Tsyr Fan (Taoyuan, Taiwan), I-Hsin Huang (Taoyuan, Taiwan), Chen-Ming Tsai (Miaoli County, Taiwan) and Yu-Ming Cheng (Yilan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a non-volatile memory includes the following steps. A stacked structure is formed on a substrate and includes a gate dielectric layer, an assist gate, an insulation layer, and a sacrificial layer stacked in order. A tunneling dielectric layer is formed at one side of the stacked structur...