US Patent Issued to IonQuest on Feb. 4 for "Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films" (Massachusetts Inventor)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,949, issued on Feb. 4, was assigned to IonQuest Corp. (Milford, Mass.).

"Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films" was invented by Bassam Hanna Abraham (Millis, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of sputtering a layer on a substrate includes positioning an HEDP magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), wherein the PCN comprises at least one inductor...