US Patent Issued to ION BEAM SERVICES, CNM-CSIC on April 1 for "Device for improving the mobility of carriers in a MOSFET channel on silicon carbide" (French, Spanish Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,692, issued on April 1, was assigned to ION BEAM SERVICES (Peynier, France) and CNM-CSIC (Barcelona, Spain).

"Device for improving the mobility of carriers in a MOSFET channel on silicon carbide" was invented by Frank Torregrosa (Simiane, France), Laurent Roux (Marseilles, France) and Philippe Godignon (Valldoreix, Spain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MOSFET device arranged on a substrate 10 having first and second heavily-doped strips 11 and 14 respectively covered by first and second contacts 13 and 15, these two strips being spaced apart by a channel 18 that also appears on the substrate 10, the channel being covered by a dielec...