US Patent Issued to INVENTION AND COLLABORATION LABORATORY on June 24 for "Semiconductor circuit structure with direct die heat removal structure" (Taiwanese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,077, issued on June 24, was assigned to INVENTION AND COLLABORATION LABORATORY INC. (Taipei, Taiwan).

"Semiconductor circuit structure with direct die heat removal structure" was invented by Chao-Chun Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor circuit structures with direct die heat removal structure are provided. The semiconductor circuit structure comprises a semiconductor substrate with an original semiconductor surface; a set of active regions within the semiconductor substrate; and a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction. W...