US Patent Issued to INVENTION AND COLLABORATION LABORATORY, ETRON TECHNOLOGY on Nov. 4 for "Transistor with controllable source/drain structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,782, issued on Nov. 4, was assigned to INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore) and ETRON TECHNOLOGY INC. (Hsinchu, Taiwan).

"Transistor with controllable source/drain structure" was invented by Chao-Chun Lu (Hsinchu, Taiwan) and Li-Ping Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure includes a substrate, a gate conductive region, a gate dielectric layer and a first conductive region. At least a portion of the gate conductive region is disposed below a surface of the substrate. The gate dielectric layer surrounds a bottom wall and sidewalls of the gate conductive region. A bottom wall ...