US Patent Issued to INVENTION AND COLLABORATION LABORATORY, ETRON TECHNOLOGY on Dec. 16 for "SRAM cell structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,600, issued on Dec. 16, was assigned to INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore) and ETRON TECHNOLOGY INC. (Hsinchu, Taiwan).

"SRAM cell structure" was invented by Chao-Chun Lu (Hsinchu, Taiwan), Li-Ping Huang (Hsinchu, Taiwan) and Juang-Ying Chueh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SRAM cell structure includes a plurality of transistors, a set of contacts, a word-line, a bit-line, a VDD contacting line and a VSS contacting line. The plurality of transistors include n transistors, wherein n is a positive integral less than 6. The set of contacts are coupled to the plurality of transistors. The word-...