US Patent Issued to INVENTION AND COLLABORATION LABORATORY, ETRON TECHNOLOGY on Aug. 26 for "Interconnection structure and manufacture method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,949, issued on Aug. 26, was assigned to INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore) and ETRON TECHNOLOGY INC. (Hsinchu, Taiwan).

"Interconnection structure and manufacture method thereof" was invented by Chao-Chun Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnection structure includes a first dielectric layer, a first conduction layer, a conductor pillar, an upper dielectric layer and an upper conduction layer. The first dielectric layer is disposed over a first terminal of a device. The first conduction layer is disposed over the first dielectric layer. The conductor pillar is connected to the first...