US Patent Issued to INVENTCHIP TECHNOLOGY on July 8 for "Trench gate power MOSFET and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,679, issued on July 8, was assigned to INVENTCHIP TECHNOLOGY Co. LTD. (Shanghai).

"Trench gate power MOSFET and manufacturing method therefor" was invented by Yongxi Zhang (Shanghai), Wei Chen (Shanghai) and Haitao Huang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A trench gate power MOSFET, including: a substrate provided with a hexagonal wide bandgap semiconductor of a first conductivity type; an epitaxial layer grown on the substrate and of the first conductivity type; a body region formed on the epitaxial layer and of a second conductivity type; a trench formed in the body region by etching, where a length direction of the trench is ...